Надежная производительность длина волны нм неизолированный чип LD лазерный диод для
- Категория: Diodes >>>
- Поставщик: Shenzhen,Raybow,Optoelectronics,Co.,Ltd.
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Описание и отзывы
Трекер стоимости
| Месяц | Минимальная цена | Макс. стоимость |
|---|---|---|
| Sep-17-2025 | 2.87 $* | 2.93 $* |
| Aug-17-2025 | 2.57 $* | 2.60 $* |
| Jul-17-2025 | 2.22 $* | 2.96 $* |
| Jun-17-2025 | 2.64 $* | 2.12 $* |
| May-17-2025 | 2.76 $* | 2.6 $* |
| Apr-17-2025 | 2.28 $* | 2.1 $* |
| Mar-17-2025 | 2.35 $* | 2.47 $* |
| Feb-17-2025 | 2.88 $* | 2.89 $* |
| Jan-17-2025 | 2.99 $* | 2.55 $* |
Характеристики
Product Description
RB-905A-74-25-0.75-SE | ||||||
■ Absolute Maximum Ratings(Trt=25℃) | ||||||
Parameter | Symbol | Values | Unit | |||
Pulsed forward current | If | 8.5 | A | |||
Reverse voltage | Vr | 2.5 | V | |||
Pulsed duration | tw | 100 | ns | |||
Duty ratio | DR | 0.1 | % | |||
Operating temperature | Top | -40~85 | ℃ | |||
Storage temperature | Tstg | -40~105 | ℃ | |||
■ Characteristics (Trt=25 ℃) | ||||||
Iop=7 A, Pw=200 ns, f=5 kHz, DR=0.1 %, Ta=25 ℃ | ||||||
Parameter | Symbol | Typical values | Unit | |||
Wavelength | ||||||
Peak emission wavelength | λop | 905 | nm | |||
Wavelength tolerance | Δλ | 10 | nm | |||
Spectral bandwidth① | Δλop | 7 | nm | |||
Wavelenth temperature coefficient | Δλ/ΔT | 0.28 | nm/℃ | |||
Electro Optical Data | ||||||
Minimum peak power at If | Pop | 25 | W | |||
Forward current | If | 7 | A | |||
Threhold current | Ith | 0.5 | A | |||
Forward voltage at If | Vf | 6.5 | V | |||
Beam spread angle(Horizontal) ② | θ∥ | 14 | degree | |||
Beam spread angle(Vertical) ① | θ⊥ | 30 | degree | |||
Geometrical | ||||||
Current injection crosssection | w x h | 74 x 10 | μm2 | |||
Cavity length | L | 750 | μm | |||
Chip width | W | 400 | μm | |||
Chip height | H | 150 | μm | |||
Applications
· LiDAR
· Laser ranging
· Safety monitoring
· Scientific research test
Features
· 3 stack PLD
· Laser wavelength: 905 nm
· Peak output power: ≥25 W
· Optical aperture size: 74 μm x 10 μm
Typical Characteristics
Figure 1：Power-Voltage-Current Characteristics
@ Pw=200 ns, f=5 kHz, Ta=25 ℃
@ Pw=200 ns, f=5 kHz, Ta=25 ℃
Figure 3：Far Field Pattern Characteristics
@ If（Pw=200 ns, f=5 kHz）, Ta=25 ℃
@ If（Pw=200 ns, f=5 kHz）, Ta=25 ℃
Figure 2：Spectral Characteristics
@If (Pw=200 ns, f=5 kHz) Ta=25 ℃
@If (Pw=200 ns, f=5 kHz) Ta=25 ℃
Figure 4：Near Field Pattern (NFP)
@ If（Pw=200 ns, f=5 kHz）, Ta=25 ℃
@ If（Pw=200 ns, f=5 kHz）, Ta=25 ℃
Product Dimension
<< Bare Laser Diode Chip Dimensional Drawing
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Packing&Shipping
Company Introduction
Raybow Opto is a high-power semiconductor laser manufacturer located in Shenzhen, China. Raybow Opto's core competency includes device design and simulation, an advanced and high-volume semiconductor laser chip fabrication factory, and a packaging and testing facility.
Our semiconductor laser products are among the highest power and most reliable laser diodes available in the market, covering a broad wavelength range from 635nm to 1550nm, and are widely used in industrial lasers, LiDAR AND 3-D sensing, medical and cosmetic lasers, laser display and illumination. Besides semiconductor lasers, Raybow Opto manufacturers various state-of-the-art, semi-automatic and fully-automatic testing equipment for semiconductor lasers. In addition, Raybow Opto offers professional services to customers such as FMEA, OEM and ODM.
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