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HVPE Вафля из нитрида галлия Индивидуальный размер отдельно стоящий GaN однокристальный

HVPE Вафля из нитрида галлия Индивидуальный размер отдельно стоящий GaN однокристальный

Категория: Полупроводники >>>
Поставщик: Shanghai,Clirik,Machinery,Co.,Ltd.

Цена:*

Количество:

Описание и отзывы

Трекер стоимости

Месяц	Минимальная цена	Макс. стоимость
Sep-17-2025	0.98 $*	0.93 $*
Aug-17-2025	0.91 $*	0.63 $*
Jul-17-2025	0.56 $*	0.13 $*
Jun-17-2025	0.21 $*	0.28 $*
May-17-2025	0.48 $*	0.45 $*
Apr-17-2025	0.24 $*	0.85 $*
Mar-17-2025	0.25 $*	0.62 $*
Feb-17-2025	0.21 $*	0.93 $*
Jan-17-2025	0.2 $*	0.44 $*

Характеристики

Product Description

HVPE Gallium Nitride Wafer Customized Size Free - Standing GaN Single Crystal Material

S${}RK7~PL`IN23O8F~7XJ

Product

Gallium nitride (GaN) substrates

Product Description:

Saphhire GaN template is presented Epitxial hydride vapor phase epitaxy (HVPE) method. In the HVPE process, the acid produced by the reaction GaCl, which is in turn reacted with ammonia to produce gallium nitride melt. Epitaxial GaN template is a cost-effective way to replace gallium nitride single crystal substrate.

Technical parameters:

Size	2 "round; 50mm ± 2mm
Product Positioning	C-axis <0001> ± 1.0.
Conductivity type	N-type & P-type
Resistivity	R <0.5Ohm-cm
Surface treatment (Ga face)	AS Grown
RMS	<1nm
Available surface area	> 90%

Specifications:

GaN epitaxial film (C Plane), N-type, 2 "* 30 microns, sapphire;

GaN epitaxial film (C Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (R Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (M Plane), N-type, 2 "* 5 microns sapphire.

AL2O3 + GaN film (N-type doped Si); AL2O3 + GaN film (P-type doped Mg)

Note: according to customer demand special plug orientation and size.

Standard Packaging:

1000 clean room, 100 clean bag or single box packaging

20180131144150_64426

Application of HVPE Gallium Nitride Wafer Customized Size Free - Standing GaN Single Crystal Material

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,

Laser Projection Display, Power Device, etc.

Laser Projection Display, Power Device, etc.
Date storage
Energy-efficient lighting
Full color fla display
Laser Projecttions
High- Efficiency Electronic devices
High- Frequency Microwave Devices
High-energy Detection and imagine
New energy solor hydrogen technology
Environment Detection and biological medicine
Light source terahertz band

20180111132605_58433

Specifications of HVPE Gallium Nitride Wafer Customized Size Free - Standing GaN Single Crystal Material

	Non-Polar Freestanding GaN Substrates(a-plane and m-plane)
Item	GaN-FS-a	GaN-FS-m
Dimensions	5.0mm×5.5mm
	5.0mm×10.0mm
	5.0mm×20.0mm
	Customized Size
Thickness	330 ± 25 µm
Orientation	a-plane ± 1°	m-plane ± 1°
TTV	≤15 µm
BOW	≤20 µm
Conduction Type	N-type
Resistivity(300K)	< 0.5 Ω·cm
Dislocation Density	Less than 5x106 cm-2
Useable Surface Area	> 90%
Polishing	Front Surface: Ra < 0.2nm. Epi-ready polished
	Back Surface: Fine ground
Package	Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.