Si2301 СОТ-23 полевого транзистора Чан Mosfet P-Ch 20V 2.3A 3-контактный T/R A1shb

Месяц

Минимальная цена

Макс. стоимость

Aug-17-2025

9.97 $*

9.61 $*

Jul-17-2025

7.20 $*

7.55 $*

Jun-17-2025

9.96 $*

9.30 $*

May-17-2025

9.6 $*

9.62 $*

Apr-17-2025

7.93 $*

7.28 $*

Mar-17-2025

9.1 $*

9.27 $*

Feb-17-2025

8.41 $*

8.1 $*

Jan-17-2025

8.86 $*

8.43 $*

Si2301 Sot-23 Fet Tran Mosfet P-Ch 20V 2.3A 3-Pin T/R A1shb Transistor

Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 10V
FET Feature	-
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V