4-8 дюймов диаметр полупроводниковой Подложки карбида кремния
- Категория: PCB & PCBA >>>
- Поставщик: Chongqing,CYS,Machinery,Co.,Ltd.
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Описание и отзывы
Трекер стоимости
| Месяц | Минимальная цена | Макс. стоимость |
|---|---|---|
| Sep-18-2025 | 298.70 $* | 313.6 $* |
| Aug-18-2025 | 295.55 $* | 310.90 $* |
| Jul-18-2025 | 248.61 $* | 260.10 $* |
| Jun-18-2025 | 290.76 $* | 305.85 $* |
| May-18-2025 | 253.32 $* | 266.19 $* |
| Apr-18-2025 | 285.32 $* | 299.67 $* |
| Mar-18-2025 | 283.37 $* | 297.13 $* |
| Feb-18-2025 | 280.87 $* | 294.56 $* |
| Jan-18-2025 | 278.95 $* | 292.75 $* |
Характеристики
Product Description
Specification
Grade | Zero MPD Production | Standard Production Grade(P Grade) | Dummy Grade(D Grade) | ||||
Diameter | 99.5mm-100mm | ||||||
Thickness | 4H-N | 350μm±15μm | 350μm±25μm | ||||
4H-Si | 500μm±15μm | 500μm±25μm | |||||
Wafer Orientation | Off axis:4.0°toward<1120>±0.5°for4H-N,On axis:<0001>±0.5° for 4H-Si | ||||||
Micropipe Density | 4H-N | ≤0.2cm² | ≤2cm² | ≤15cm² | |||
4H-Si | ≤1cm² | ≤5cm² | ≤15cm² | ||||
Resistivity | 4H-N | 0.015-0.024Ω.cm | 0.015-0.028Ω.cm | ||||
4H-Si | ≥1E10Ω.cm | ≥1E5Ω.cm | |||||
Primary Flat Orientation | {10-10}±5.0° | ||||||
Primary Flat Length | 32.5mm±2.0mm | ||||||
Secondary Flat Length | 18.0mm±2.0mm | ||||||
Secondary Flat Orientation | Silicon face up:90°CW. from Prime flat±5.0° | ||||||
Edge Exclusion | 3mm | ||||||
LTV/TTV/Bow/Warp | ≤2.5μm/≤5μm/≤15μm/≤30μm | ≤10μm/≤15μm/≤25μm/≤40μm | |||||
Roughness | Polish Ra≤1nm | ||||||
CMP Ra≤0.2nm | Ra≤0.5nm | ||||||
Edge Cracks By High Intensity Light | None | None | Cumulative length ≤10mm,single length≤2mm | ||||
Hex Plates By High Intensity Light | Commulative area≤0.05% | Commulative area≤0.1% | |||||
Polytype Areas By High Intensity Light | None | None | Commulative area≤3% | ||||
Visual Carbon Inclusions | Commulative area≤0.05% | Commulative area≤3% | |||||
Silicon Surface Scratches By High Intensity Light | None | None | Cumulative length ≤1×wafer diameter | ||||
Edge Chips By High Intensity Light | None permitted≥0.2mm width and depth | 5 allowed,≤1mm each | |||||
Silicon Surface Contamination By High Intensity Light | None | None | None | ||||
Threading screw dislocation(TSD) | ≤500cm² | N/A | N/A | ||||
Packaging | Multi-wafer Cassette Or Single Wafer Container | ||||||
8"N type silicon carbide double side polished wafer | ||||||||||
REV.01(2022.08) | ||||||||||
NO. | Item | Unit | Production | Research | Dummy | |||||
1 Crystal data | ||||||||||
1.1 | polytype | ---- | 4H | 4H | 4H | |||||
1.2 | surface orientation | ° | <11-20>4±0.5 | <11-20>4=0.5 | <11-20>4±0.5 | |||||
2 Optical data | ||||||||||
2.1 | dopant | ---- | n-type Nitrogen | n-ype Nitrogen | n-type Nitrogen | |||||
2.2 | resistivity | ohm:cm | 0.015-0.025 | 0.01~0.03 | NA | |||||
3 Mechanical date | ||||||||||
3.1 | diameter | mm | 200±0.2 | 200±0.2 | 200±0.2 | |||||
3.2 | thickness | μm | 500±25 | 500±25 | 500±25 | |||||
3.3 | Nolch Notch orientation | ° | [1-100]+5 | 1-100]+5 | [1-100]+5 | |||||
3.4 | Notch Notch Depth | mm | 1~1.5 | 1~1.5 | 1~1.5 | |||||
3.5 | LTV | μm | ≤5(10mm*10mm) | ≤5(10mm*10mm) | ≤10(10mm*10mm | |||||
3.6 | TTV | μm | ≤10 | ≤10 | ≤15 | |||||
3.7 | Bow | μm | 25-25 | 45-45 | 65-65 | |||||
3.8 | Warp | μm | ≤30 | ≤50 | ≤70 | |||||
3.9 | AFM | nm | Ra≤0.2 | Ra≤0.2 | Ra≤0.2 | |||||
4 Structure | ||||||||||
4.1 | micropipe density | ca/cm² | ≤2 | ≤10 | ≤50 | |||||
4.2 | metal content | atoms/em | ≤1E11 | ≤1E11 | NA | |||||
4.3 | TSD | ca/cm2 | ≤500 | ≤1000 | NA | |||||
4.4 | BPD | ea/cm2 | ≤2000 | ≤5000 | NA | |||||
4.5 | TED | ca/cm2 | ≤7000 | ≤10000 | NA | |||||
5 Front details | ||||||||||
5.1 | front | ---- | Si | Si | Si | |||||
5.2 | surface finish | ---- | Si CMP Si-face CMP | Si CMP Si-face CMP | Si CMP Si-face CMP | |||||
5.3 | particle | eu/wafer | 100(size20.3μm) | NA | NA | |||||
5.4 | scratch | ca/wafer | s5,Total Lengths200mm | NA | NA | |||||
5.5 | Edge chips/indentsleracks/stainsicontamination | ---- | None | None | NA | |||||
5.6 | Polytype areas | ---- | None | Arca≤10% | Area≤30% | |||||
5.7 | front marking | ---- | None | None | None | |||||
6 Back details | ||||||||||
6.1 | back finish | ---- | C MP C-face MP | C MP C-face MP | C MP C-face MP | |||||
6.2 | scratch | /mm | NA | NA | NA | |||||
6.3 | Back defects edge chips/indents | ---- | None | None | NA | |||||
6.4 | Back roughness | nm | Ras5 | Ras5 | Ras5 | |||||
6.5 | back marking | ---- | Notch | Notch | Notch | |||||
7 edge | ||||||||||
71 | edge | ---- | Chamfer | Chamfer | Chamfer | |||||
8 package | ||||||||||
8.1 | packagin | ---- | Epi-ready with vacuum packaging | Epi-ready with vacuum packaging | Epi-ready with vacuum packaging | |||||
8.2 | packaging | ---- | Multi-wafer cassette packaging | Multi-wafer cassette pickaging | Multi-wafer cassette packaging | |||||
Note：NA means no requirements | ||||||||||
Company Profile
Chongqing CYS Machinery Co., Ltd Located in Chongqing - one of the largest industrial cities in China.
we focus on designing, producing of the synthetic sapphire and ruby bearing, marine equipments etc. more than 15 years. and have
rich experice in importing and exporting.
To explore new market for our products, our company often launches various products worldwide as well.
We are the company with first-rate teamwork and our motto is "to foster sustainable development, to set up sincere reputation, to
improve service, to optimize investing environment, to form close strategic partnerships with customers, to serve customers
wholeheartedly and to develop together with customers".
Now, facing the keen competition of the market, and with rich experience in international trade, we have a high reputation, good
quality products and competitive price. We have had cooperation with worldwide enterprises. We hope that our work can make your
business perfect. We are looking forward to establishing relationships with you in the near future.
we focus on designing, producing of the synthetic sapphire and ruby bearing, marine equipments etc. more than 15 years. and have
rich experice in importing and exporting.
To explore new market for our products, our company often launches various products worldwide as well.
We are the company with first-rate teamwork and our motto is "to foster sustainable development, to set up sincere reputation, to
improve service, to optimize investing environment, to form close strategic partnerships with customers, to serve customers
wholeheartedly and to develop together with customers".
Now, facing the keen competition of the market, and with rich experience in international trade, we have a high reputation, good
quality products and competitive price. We have had cooperation with worldwide enterprises. We hope that our work can make your
business perfect. We are looking forward to establishing relationships with you in the near future.
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