Полевой МОП-транзистор NVMFS6H836NLT1G N-Channel 80V 16A/77A 5DFN новый


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Цена:0,10 $ - 1,00 $*

Количество:



Описание и отзывы


Трекер стоимости

Месяц Минимальная цена Макс. стоимость
Sep-19-2025 0.26 $* 0.44 $*
Aug-19-2025 0.4 $* 0.22 $*
Jul-19-2025 0.10 $* 0.64 $*
Jun-19-2025 0.70 $* 0.3 $*
May-19-2025 0.1 $* 0.86 $*
Apr-19-2025 0.61 $* 0.56 $*
Mar-19-2025 0.4 $* 0.94 $*
Feb-19-2025 0.65 $* 0.53 $*
Jan-19-2025 0.94 $* 0.71 $*

Характеристики


Product Information
 
 
Place of Origin Original
Model Number NVMFS6H836NLT1G
Type MOSFET
D/C Newest
Supplier Type Retailer
Cross Reference -
Media Available datasheet
Brand Transistor
Current - Collector (Ic) (Max) 16A (Ta), 77A (Tc)
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic Standard
Current - Collector Cutoff (Max) 16A (Ta), 77A (Tc)
Operating Temperature -55°C ~ 150°C(TJ)
Mounting Type Surface Mount
Package / Case Standard
Resistor - Base (R1) Standard
Resistor - Emitter Base (R2) Standard
FET Type Standard
FET Feature Standard
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs 6.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 95uA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 40 V
Frequency Standard
Current Rating (Amps) Standard
Noise Figure Standard
Power - Output Standard
Voltage - Rated Standard
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs (Max) ±20V
IGBT Type Standard
Configuration Single
Resistance - RDS(On) Standard
Applications Standard
Package Bulk
Series Datasheet
Part Status In Stock
Supplier Device Package Box
Approval Agency -
Sample Available
Condition New and Original
Warranty One Year
 
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