SIDR626EP-T1-RE3 Bom сервис N-Channel 60 V (D-S) 175C MOSFET Новый

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Product Information

Place of Origin	Original
Model Number	SIDR626EP-T1-RE3
Type	MOSFET
D/C	Newest
Supplier Type	Retailer
Cross Reference	-
Media Available	datasheet
Brand	Transistor
Current - Collector (Ic) (Max)	50.8A (Ta), 227A (Tc)
Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	Standard
Current - Collector Cutoff (Max)	50.8A (Ta), 227A (Tc)
Operating Temperature	-55°C ~ 150°C(TJ)
Mounting Type	Surface Mount
Package / Case	Standard
Resistor - Base (R1)	Standard
Resistor - Emitter Base (R2)	Standard
FET Type	Standard
FET Feature	Standard
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	50.8A (Ta), 227A (Tc)
Rds On (Max) @ Id, Vgs	1.74mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250uA
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5130 pF @ 30 V
Frequency	Standard
Current Rating (Amps)	Standard
Noise Figure	Standard
Power - Output	Standard
Voltage - Rated	Standard
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Vgs (Max)	±20V
IGBT Type	Standard
Configuration	Single
Resistance - RDS(On)	Standard
Applications	Standard
Package	Bulk
Series	Datasheet
Part Status	In Stock
Supplier Device Package	Box
Approval Agency	-
Sample	Available
Condition	New and Original
Warranty	One Year