Диоды для подавления переходных скачков напряжения NX-P PMBD7000 диод слабых сигналов двойной серии 100V 215 mA 1 25 V 4Ns 4A по ограничению на использование опасных материалов в производстве отвечающих требованиям не SVHC СОТ-23 диоды


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Цена:0,01 $ - 0,03 $*

Количество:



Описание и отзывы


Трекер стоимости

Месяц Минимальная цена Макс. стоимость
Sep-16-2025 0.81 $* 0.3 $*
Aug-16-2025 0.9 $* 0.95 $*
Jul-16-2025 0.54 $* 0.77 $*
Jun-16-2025 0.26 $* 0.60 $*
May-16-2025 0.20 $* 0.44 $*
Apr-16-2025 0.98 $* 0.19 $*
Mar-16-2025 0.48 $* 0.76 $*
Feb-16-2025 0.24 $* 0.55 $*
Jan-16-2025 0.71 $* 0.62 $*

Характеристики



Detailed information


Description:

Description & Applications

NPN switching transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS

Telephony and professional communication equipment

DESCRIPTION NPN switching transistor in a SOT23 plastic package




Specification:


1.1 General description

NPN single switching transistor in a leadless ultra small SOT883B Surface-Mounted


Device (SMD) plastic package


PNP complement: PMBT3906MB



1.2 Features and benefits

Single general-purpose switching transistor

AEC-Q101 qualified

Ultra small SMD plastic package

Board-space reduction

Low package height of 0.37 mm

1.3 Applications

General-purpose switching and amplification

Mobile applications





Products Description




Part number
PMBD7000, PMBD7000,215, PMBD7000TR, PMBT2907A, PMBT2907A,###, PMBT2907A,215
Description
NPN switching transistors, PMBT2907A,### Single-Transistor Bipolar, Universal, PNP, -60 V, 200 MHz, 250 mW, -600 mA, 100 hFE
Brand
N-X-P


Specification




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Contact Info

Company Name :
Shenzhen Res Electronics Limited
Contact Name :
Karen Zhang
E-mail :
Karen@reselectronics.com.cn
Wesbite :www.reselectronics.com.cn



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